Modified Deal Grove model for the thermal oxidation of silicon carbide

Journal of Applied Physics

Volumn 95, Issue 9, 2004, Pages 4953-4957

  Song, Y ^a   Dhar, S ^a   Feldman, L C ^a   Chung, G ^b   Williams, J R ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b Dow Corning Inc ^*  (United States)

^c AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL FACES; INTERFACE REACTIONS; OXIDANTS; THERMAL OXIDATION;

ACTIVATION ENERGY; ANISOTROPY; CARBON; CHEMICAL BONDS; CRYSTALS; DIFFUSION; INTERFACES (MATERIALS); OXIDATION; RATE CONSTANTS; SILICON; SURFACE CHEMISTRY;

SILICON CARBIDE;

EID: 2442428475     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1690097     Document Type: Article

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