Limiting Step Involved in the Thermal Growth of Silicon Oxide Films on Silicon Carbide

Physical Review Letters

Volumn 89, Issue 25, 2002, Pages

  Vickridge, I C ^a   Trimaille, I ^a   Ganem, J J ^a   Rigo, S ^a   Radtke, C ^b   Baumvol, I J R ^b   Stedile, F C ^c  

^a SORBONNE UNIVERSITÉ   (France)

^b Instituto de Física   (United States)

^c R Francisco Degni S/n Bairro Q   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DIFFUSION; FILM GROWTH; INTERFACES (MATERIALS); OXIDATION; SUBSTITUTION REACTIONS;

NARROW RESONANCE NUCLEAR REACTION PROFILING; OXYGEN ISOTROPIC SUBSTITUTION; SILICON OXIDE FILMS; THERMAL GROWTH;

SILICON CARBIDE;

EID: 0037122276     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.89.256102     Document Type: Article

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