Analysis of the linewidth-enhancement factor of long-wavelength tunnel-injection quantum-dot lasers

IEEE Journal of Quantum Electronics

Volumn 43, Issue 5, 2007, Pages 363-369

  Mi, Zetian ^a   Bhattacharya, Pallab ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Linewidth enhancement factor; Quantum dot (QD) laser; Tunnel injection

Indexed keywords

CHARGE CARRIERS; ELECTRONS; HETEROJUNCTIONS; LINEWIDTH; MATHEMATICAL MODELS; RELAXATION PROCESSES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

LINEWIDTH-ENHANCEMENT FACTOR; QUANTUM-DOT LASER; TUNNEL INJECTION;

INJECTION LASERS;

EID: 34047196062     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2007.893895     Document Type: Article

References (35)

1. C. H. Henry, "Theory of the linewidth-enhancement factor of semiconductor lasers," IEEE J. Quantum Electron., vol. QE-18, no. 2, pp. 259-264, Feb. 1982.
2. J. R. Marciante and G. P. Agrawal, "Nonlinear mechanisms of filamentaion in broad-area semiconductor lasers," IEEE J. Quantum Electron., vol. 32, no. 4, pp. 590-596, Apr. 1996.
3. E. Gehrig, O. Hess, C. Ribbat, R. L. Sellin, and D. Bimberg, "Dynamic filamentation and beam quality of quantum-dot lasers," Appl. Phys. Lett., vol. 84, pp. 1650-1652, 2004.
4. C. S. Chang, S. L. Chuang, J. R. Minch, W. C. W. Fang, Y. K. Chen, and T. TanbunEk, "Amplified spontaneous emission spectroscopy in strained quantum-well lasers," IEEE J. Sel. Topics Quantum Electron., vol. 1, no. 4, pp. 1100-1107, Dec. 1995.
5. P. J. A. Thijs, T. Dongen, L. F. Tiemeijer, and J. J. M. Binsma, "High-performance λ = 1:3 μm InGaAsP-InP strained-layer quantum well lasers," J. Lightw. Technol., vol. 12, no. 1, pp. 28-37, Jan. 1994.
6. Y. Miyake and M. Asada, "Spectral characteristics of linewidth-enhancement factor α of multidimensional quantum wells," Jpn. J. Appl. Phys., vol. 28, pt. 1, pp. 1280-1281, 1989.
7. D. Bimberg, N. Kirstaedter, N.N. Ledentsov, Z. I. Alferov, P. S. Kopev, and V. M. Ustinov, "InGaAs-GaAs quantum-dot lasers," IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 2, pp. 196-205, Apr. 1997.
8. T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Gain and linewidth-enhancement factor in InAs quantum-dot laser diodes," IEEE Photon. Technol. Lett., vol. 11, no. 12, pp. 1527-1529, Dec. 1999.
9. J. Muszalski, J. Houlihan, G. Huyet, and B. Corbett, "Measurement of linewidth-enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm," Electron. Lett., vol. 40, pp. 428-429, 2004.
10. A. A. Ukhanov, A. Stintz, P. G. Eliseev, and K. J. Malloy, "Engineering the α-factor in quantum dot-in-a-well lasers," presented at the Conf. Lasers Electro-Optics, San Francisco, CA, May 2004, paper CThB2.
11. A. Martinez, A. Lemaître, K. Merghem, L. Ferlazzo, C. Dupuis, A. Ramdane, J.-G. Provost, B. Dagens, O. Le Gouezigou, and O. Gauthier-Lafaye, "Static and dynamic measurements of the α-factor of five-quantum-dot-layer single-mode lasers emitting at 1.3 μm on GaAs," Appl. Phys. Lett., vol. 86, p. 211115, 2005.
12. B. Dargens, A. Markus, J. X. Chen, J.-G. Provost, D. Make, O. Le Gouezigou, J. Landreau, A. Fiore, and B. Thedrez, "Giant linewidth-enhancement factor and purely frequency modulated emission from quantum dot laser," Electron. Lett., vol. 41, pp. 323-324, 2005.
13. S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Quyang, and D. Bimberg, "Linewidth enhancement factor in InGaAs quantum-dot amplifier," IEEE J. Quantum Electron., vol. 40, no. 10, pp. 1423-1429, Oct. 2004.
14. E. Gehrig and O. Hess, "Dynamic amplitude-phase coupling in quantum-dot lasers," Appl. Phys. Lett., vol. 86, p. 203116, 2005.
15. A. Markus, J. X. Chen, O. Gauthier-Lafaye, J.-G. Provost, C. Paranthoën, and A. Fiore, "Impact of intraband relaxation on the performance of a quantum-dot laser," IEEE J. Sel. Topics Quantum Electron., vol. 9, no. 5, pp. 1308-1314, Sep./Oct. 2003.
16. S. P. Hegarty, B. Corbett, J. G. McInerney, and G. Huyet, "Free-carrier effect on index change in 1.3 μm quantum-dot lasers," Electron. Lett., vol. 41, pp. 416-418, 2005.
17. A. V. Uskov, E. P. O'Reilly, D. McPeake, N. N. Lendentsov, D. Bimberg, and G. Huyet, "Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states," Appl. Phys. Lett., vol. 84, pp. 272-274, 2004.
18. D. Leonard, K. Pond, and P. M. Petroff, "Critical layer thickness for self-assembled InAs islands on GaAs," Phys. Rev. B, vol. 50, pp. 11687-11692, 1994.
19. P. Bhattacharya, S. Ghosh, S. Pradhan, J. Singh, Z.-K. Wu, J. Urayama, K. Kim, and T. B. Norris, "Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers," IEEE J. Quantum Electron., vol. 39, no. 8, pp. 952-962, Aug. 2003.
20. Z. Mi, P. Bhattacharya, and S. Fathpour, "High-speed 1.3 μm tunnel injection quantum-dot lasers," Appl. Phys. Lett., vol. 86, p. 153109, 2005.
21. l-x As/GaAs quantum dot lasers," Phys. Rev. B, vol. 61, pp. 7595-7603, 2000.
22. M. Gioannini, A. Sevega, and I. Montrosset, "Simulations of differential gain and linewidth-enhancement factor of quantum dot semiconductor lasers," Opt. Quantum Electron., vol. 38, pp. 381-394, 2006.
23. 0.6 As-GaAs self-organized quantum-dot lasers," IEEE Photon. Technol. Lett., vol. 9, no. 10, p. 1301, Oct. 1997.
24. K. Kim, J. Urayama, T. B. Norris, J. Singh, J. Phillips, and P. Bhattacharya, "Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots," Appl. Phys. Lett., vol. 81, pp. 670-672, 2002.
25. D. G. Deppe and H. Huang, "Fermi's golden rule, nonequilibrium electron capture from the wetting layer, and the modulation response in p-doped quantum-dot lasers," IEEE J. Quantum Electron., vol. 42, no. 3, pp. 324-330, Mar. 2006.
26. 0.5 As/GaAs single quantum dot at room temperature investigated using a highly sensitive near-field scanning optical microscope," Phys. Rev. B, vol. 63, p. 121304, 2001.
27. S. Melnik and G. Huyet, "The linewidth-enhancement factor α of quantum dot semiconductor lasers," Opt. Exp., vol. 14, pp. 2950-2955, 2006.
28. P. K. Kondratko, S.-L. Chuang, G. Walter, T. Chung, and N. Holonyak, "Observations of near-zero linewidth-enhancement factor in a quantum-well coupled quantum-dot laser," Appl. Phys. Lett., vol. 83, pp. 4818-4820, 2003.
29. S. Fathpour, Z. Mi, and P. Bhattacharya, "High-speed quantum dot lasers," J. Phys. D, Appl. Phys., vol. 38, pp. 2103-2111, 2005.
30. S. Fathpour, Z. Mi, and P. Bhattacharya, "Small-signal modulation characteristics of p-doped 1.1- and 1.3-μm quantum-dot lasers," Photon. Technol. Lett., vol. 17, no. 11, pp. 2250-2252, Nov. 2005.
31. J. Kim, H. Su, S. Minin, and S.-L. Chuang, "Comparison of linewidth-enhancement factor between p-doped and undoped quantum-dot lasers," IEEE Photon. Technol. Lett., vol. 18, no. 9, pp. 1022-1024, Sep. 2006.
32. 0 = ∞) of p-doped 1.3 μm quantum dot lasers," Appl. Phys. Lett., vol. 85, pp. 5164-5166, 2004.
33. I. P. Marko, N. F. Massé, S. J. Sweeney, A. D. Andreev, A. R. Adams, N. Hatori, and M. Sugawara, "Carrier transport and recombination in p-doped and intrinsic 1.3 μm InAs/GaAs quantum-dot lasers," Appl. Phys. Lett., vol. 87, p. 211114, 2005.
34. I. I. Novikov, N. Y. Gordeev, M. V. Maksimov, Y. M. Shernyakov, E. S. Semenova, A. P. Vasil'ev, A. E. Zhukov, V. M. Ustinov, and G. G. Zegrya, "Temperature dependence of the effective coefficient of Auger recombination in 1.3 μm InAs/GaAs QD lasers," Semiconductors, vol. 39, pp. 481-484, 2005.
35. Z. Xu, D. Birkedal, M. Juhl, and J. M. Hvam, "Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth-enhancement factor," Appl. Phys. Lett., vol. 85, pp. 3259-3261, 2004.