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Volumn 42, Issue 2, 2006, Pages 121-123

Self-organised quantum dots as dislocation filters: The case of GaAs-based lasers on silicon

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON;

EID: 31344458954     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20063582     Document Type: Article
Times cited : (81)

References (11)
  • 1
    • 0000575813 scopus 로고
    • Dislocation reduction in epitaxial GaAs on Si (100)
    • Fischer, R.: et al. ' Dislocation reduction in epitaxial GaAs on Si (100) ', Appl. Phys. Lett., 1986, 48, p. 1223-1225
    • (1986) Appl. Phys. Lett. , vol.48 , pp. 1223-1225
    • Fischer, R.1
  • 2
    • 0037620044 scopus 로고
    • Defect reduction in GaAs grown by molecular beam epitaxy using different superlattice structures
    • Bedair, S.M.: et al. ' Defect reduction in GaAs grown by molecular beam epitaxy using different superlattice structures ', Appl. Phys. Lett., 1986, 49, p. 942-944
    • (1986) Appl. Phys. Lett. , vol.49 , pp. 942-944
    • Bedair, S.M.1
  • 3
    • 0006215566 scopus 로고
    • Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates by strained-layer superlattices
    • Yamaguchi, M., Sugo, M., and Itoh, Y.: ' Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates by strained-layer superlattices ', Appl. Phys. Lett., 1989, 54, p. 2568-2570
    • (1989) Appl. Phys. Lett. , vol.54 , pp. 2568-2570
    • Yamaguchi, M.1    Sugo, M.2    Itoh, Y.3
  • 4
    • 0001328873 scopus 로고    scopus 로고
    • Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study
    • Jiang, H., and Singh, J.: ' Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: an eight-band study ', J. Appl. Phys., 1997, 56, p. 4696-4701
    • (1997) J. Appl. Phys. , vol.56 , pp. 4696-4701
    • Jiang, H.1    Singh, J.2
  • 5
    • 0000672922 scopus 로고    scopus 로고
    • Strain distributions in quantum dots of arbitrary shape
    • Andreev, A.D.: et al. ' Strain distributions in quantum dots of arbitrary shape ', J. Appl. Phys., 1999, 86, p. 297-305
    • (1999) J. Appl. Phys. , vol.86 , pp. 297-305
    • Andreev, A.D.1
  • 6
    • 4344634808 scopus 로고    scopus 로고
    • Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
    • Liu, H.Y.: et al. ' Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer ', Appl. Phys. Lett., 2004, 85, p. 704-706
    • (2004) Appl. Phys. Lett. , vol.85 , pp. 704-706
    • Liu, H.Y.1
  • 7
    • 0037339267 scopus 로고    scopus 로고
    • Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors
    • Kochman, B., and Kochman, B.: et al. ' Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors ', IEEE J. Quantum Electron., 2003, 39, p. 459-467
    • (2003) IEEE J. Quantum Electron. , vol.39 , pp. 459-467
    • Kochman, B.1    Kochman, B.2
  • 8
    • 0000139837 scopus 로고    scopus 로고
    • 0.6As quantum-dot lasers grown on Si substrates
    • 0.6As quantum-dot lasers grown on Si substrates ', Appl. Phys. Lett., 1999, 74, p. 1355-1357
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 1355-1357
    • Linder, K.K.1
  • 9
    • 22944438437 scopus 로고    scopus 로고
    • 0.5As quantum-dot lasers grown on silicon
    • 0.5As quantum-dot lasers grown on silicon ', Electron. Lett., 2005, 41, p. 742-743
    • (2005) Electron. Lett. , vol.41 , pp. 742-743
    • Mi, Z.1
  • 10
    • 0039565588 scopus 로고    scopus 로고
    • 1-xAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers
    • 1-xAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers ', J. Appl. Phys., 2001, 90, p. 5463-5468
    • (2001) J. Appl. Phys. , vol.90 , pp. 5463-5468
    • Kazi, Z.I.1
  • 11
    • 0032620409 scopus 로고    scopus 로고
    • InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
    • Ustinov, V.M.: et al. ' InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm ', Appl. Phys. Lett., 1999, 74, p. 2815-2817
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 2815-2817
    • Ustinov, V.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.