Static and dynamic measurements of the α -factor of five-quantum-dot-layer single-mode lasers emitting at 1.3 μm on GaAs

Applied Physics Letters

Volumn 86, Issue 21, 2005, Pages 1-3

  Martinez, A ^a   Lematre A ^a   Merghem, K ^a   Ferlazzo, L ^a   Dupuis, C ^a   Ramdane, A ^a   Provost, J G ^b   Dagens, B ^b   Le Gouezigou, O ^b   Gauthier Lafaye, O ^c  

^a CNRS   (France)

^b ALCATEL THALES III V LAB   (France)

^c LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GROUND STATE; MODULATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

DYNAMIC MEASUREMENT; FABRY-PEROT MODELS; FIVE-QUANTUM-DOT-LAYER; OPTICAL GAIN;

SEMICONDUCTOR QUANTUM DOTS;

EID: 20844443259     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1935754     Document Type: Article

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