Molecular beam epitaxial growth and characteristics of 1.52 μm metamorphic InAs quantum dot lasers on GaAs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 3, 2008, Pages 1153-1156

  Mi, Z ^a   Wu, C ^a   Yang, J ^a   Bhattacharya, P ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METAMORPHIC BUFFER LAYERS; METAMORPHIC QUANTUM DOT LASERS; MOLECULAR BEAM EPITAXIAL GROWTH; ULTRALOW THRESHOLD CURRENT;

EPITAXIAL GROWTH; FREQUENCY RESPONSE; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTOR LASERS;

EID: 44649158833     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2889386     Document Type: Article

References (18)

1. E. C. Le Ru, P. Howe, T. S. Jones, and R. Murray, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.67.165303 67, 165303 (2003).
2. J. Tatebayashi, M. Nishioka, and Y. Arakawa, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1375842 78, 3469 (2001).
3. N. N. Ledentsov, J. Cryst. Growth JCRGAE 0022-0248 301-302, 914 (2007).
4. Z. Mi, P. Bhattacharya, and J. Yang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2358847 89, 153109 (2006).
5. J. Tatebayashi, A. Khoshakhlagh, S. H. Huang, L. R. Dawson, G. Balakrishnan, and D. L. Huffaker, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2390654 89, 203116 (2006).
6. P. G. Eliseev, H. Li, T. Liu, T. C. Newell, L. F. Lester, and K. J. Malloy, IEEE J. Sel. Top. Quantum Electron. IJSQEN 1077-260X 10.1109/2944.954121 7, 135 (2001).
7. S. Fathpour, Z. Mi, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, A. V. Kozhukhov, and N. N. Ledentsov, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1829158 85, 5164 (2004).
8. H. Y. Liu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2336998 89, 073113 (2006).
9. P. K. Kondratko, S. L. Chuang, G. Walter, T. Chung, and N. Holonyak, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1631397 83, 4818 (2003).
10. Z. Mi, P. Bhattacharya, and S. Fathpour, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1899230 86, 153109 (2005).
11. S. Fathpour, Z. Mi, and P. Bhattacharya, J. Phys. D JPAPBE 0022-3727 10.1088/0022-3727/38/13/005 38, 2103 (2005).
12. A. E. Zhukov, Electron. Lett. ELLEAK 0013-5194 10.1049/el:19990548 35, 845 (1999).
13. P. Bhattacharya, S. Ghosh, S. Pradhan, J. Singh, Z. K. Wu, and T. Norris, IEEE J. Quantum Electron. IEJQA7 0018-9197 10.1109/JQE.2003.814374 39, 952 (2003).
14. N. N. Ledentsov, Electron. Lett. ELLEAK 0013-5194 10.1049/el:20030753 39, 1126 (2003).
15. O. B. Shchekin and D. G. Deppe, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1476708 80, 3277 (2002).
16. Z. Mi, J. Yang, P. Bhattacharya, and D. L. Huffaker, Electron. Lett. ELLEAK 0013-5194 10.1049/el:20063582 42, 121 (2006).
17. J. Yang, P. Bhattacharya, and Z. Mi, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2007.906928 54, 2849 (2007).
18. T. Kettler, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2236291 89, 041113 (2006).