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Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 2133-2135

InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers

(7) Xin, Y C a Vaughn, L G a Dawson, L R a Stintz, A a Lin, Y a Lester, L F a Huffaker, D L a

a UNIVERSITY OF NEW MEXICO (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; GROUND STATE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE;

THRESHOLD CURRENTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0042010037 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1582229 Document Type: Article

Times cited : (82)

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