Gain and linewidth enhancement factor in InAs quantum-dot laser diodes

IEEE Photonics Technology Letters

Volumn 11, Issue 12, 1999, Pages 1527-1529

  Newell, T C ^a   Bossert, D J ^b   Stintz, A ^a   Fuchs, B ^a   Malloy, K J ^a   Lester, L F ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GAIN MEASUREMENT; GROUND STATE; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION;

INDIUM ARSENIDE; LINEWIDTH ENHANCEMENT FACTOR;

SEMICONDUCTOR LASERS;

EID: 0033322463     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.806834     Document Type: Article

References (14)

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