Strong 1.3-1.6 μm light emission from metamorphic InGaAs quantum wells on GaAs

Applied Physics Letters

Volumn 86, Issue 17, 2005, Pages 1-3

  Tangring I ^a   Wang, S M ^a   Gu, Q F ^a   Wei, Y Q ^a   Sadeghi, M ^a   Larsson, A ^a   Zhao, Q X ^a   Akram, M N ^b   Berggren, J ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; CURRENT DENSITY; LASER APPLICATIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SURFACE ROUGHNESS; THRESHOLD VOLTAGE;

METAMORPHIC INGAAS QUANTUM DOTS; QUANTUM DOT LASERS; ROOM TEMPERATURE; THREADING DISLOCATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 20844433033     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1906308     Document Type: Article

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