Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 1131-1135

  Hoke, W E ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644450397     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590707     Document Type: Article

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