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Volumn 80, Issue 7, 1996, Pages 4112-4115

Growth of high quality Al0.22Ga0.78As layers on Si substrates by metalorganic chemical vapor deposition

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[No Author keywords available]

Indexed keywords


EID: 0000364240     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363282     Document Type: Article
Times cited : (13)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.