Defect generation in p-MOSFETs under negative-bias stress: An experimental perspective

IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 1, 2008, Pages 35-45

  Mahapatra, Souvik ^a,b   Alam, Muhammad Ashraful ^a,c  

^a IEEE

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^c PURDUE UNIVERSITY   (United States)

Author keywords

Bulk traps; Charge pumping (CP); Hole trapping; Hot hole generation; Interface traps; Negative bias temperature instability (NBTI); On the fly (OTF) I DLIN; p MOSFETs; Reaction diffusion (RD) model; Si oxynitride

Indexed keywords

ELECTRIC CHARGE; HOLE TRAPS; MATHEMATICAL MODELS; PARAMETER ESTIMATION; TEMPERATURE MEASUREMENT;

CHARGE PUMPING; DEFECT GENERATION; HOT HOLE GENERATION; INTERFACE TRAPS; NEGATIVE BIAS STRESS; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); REACTION DIFFUSION (RD) MODELS;

MOSFET DEVICES;

EID: 40549121324     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.912261     Document Type: Article

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