Model for nitridation of nanoscale SiO 2 thin films in pulsed inductively coupled N 2 plasma

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Rauf, Shahid ^a   Lim, Sangwoo ^a   Ventzek, Peter L G ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROELECTRONIC DEVICES; NITRIDATION; PULSE INDUCTIVITY; SURFACE PHYSICS;

CONCENTRATION (PROCESS); DIELECTRIC MATERIALS; GATES (TRANSISTOR); INDUCTIVELY COUPLED PLASMA; ION IMPLANTATION; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; NITROGEN; PERMITTIVITY; SEMICONDUCTOR DEVICES; SILICA;

THIN FILMS;

EID: 23844503320     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1949272     Document Type: Article

References (24)

1. T. Czerwiec, H. Michel, and E. Bergmann, Surf. Coat. Technol. 108-109, 182 (1998).
2. S. C. Song, H. F. Luan, Y. Y. Chen, M. Gardner, J. Fulford, M. Allen, and D. L. Kwong, IEDM'98 Technical Digest, IEEE International Electron Devices Meeting, Dec. 6-9, 1998, San Francisco, CA, (IEEE, New York, 1998), p. 373.
3. E. P. Gusev, H.-C. Lu, E. L. Garfunkel, T. Gustafsson, and M. L. Green, IBM J. Res. Dev. 43, 265 (1999).
4. H.-H. Tseng, IEEE Electron Device Lett. 23, 704 (2002).
5. H. N. Al-Shareef, Appl. Phys. Lett. 78, 3875 (2001).
6. C.-H. Chen, IEEE Trans. Electron Devices 49, 840 (2002).
7. C. H. Chen, IEEE Electron Device Lett. 22, 260 (2001).
8. S. F. Ting, IEEE Electron Device Lett. 22, 327 (2001).
9. K. Sekine, S. Inumiya, M. Sato, A. Kaneko, K. Eguchi, and Y. Tsunashima, IEDM '03 Technical Digest, IEEE International Electron Devices Meeting, Dec. 8-10, 2003, Washington, DC, (IEEE, New York, 2003), p. 103.
10. D. Kapila, S. Hattangady, M. Douglas, R. Kraft, and M. Gribelyuk, J. Electrochem. Soc. 146, 1111 (1999).
11. C. H. Chen, IEEE Electron Device Lett. 22, 378 (2001).
12. H. Niimi and G. Lucovsky, J. Vac. Sci. Technol. B 17, 2610 (1999).
13. A. Khandelwal, H. Niimi, G. Lucovsky, and H. H. Lamb, J. Vac. Sci. Technol. A 20, 1989 (2002).
14. J. R. Shallenberger, D. A. Cole, and S. W. Novak, J. Vac. Sci. Technol. A 17, 1086 (1999).
15. S. Rauf, IEEE Trans. Plasma Sci. 31, 471 (2003).
16. D. L. Scharfetter and H. K. Gummel, IEEE Trans. Electron Devices 16, 64 (1969).
17. M. K. Seager, "A SLAP for the Masses", Lawrence Livermore Nat. Lab., Livermore, CA, Tech. Rep. UCRL-100 195, 1988. SLAP library is available online at http:// www.netlib.org.
18. P. Subramonium and M. J. Kushner, J. Vac. Sci. Technol. A 20, 313 (2002).
19. P. Subramonium and M. J. Kushner, J. Vac. Sci. Technol. A 20, 325 (2002).
20. B. Ramamurthi and D. J. Economou, J. Vac. Sci. Technol. A 20, 467 (2002).
21. R. L. Kinder and M. J. Kushner, J. Vac. Sci. Technol. A 17, 2421 (1999).
22. H. Niimi, A. Khandelwal, H. H. Lamb, and G. Lucovsky, J. Appl. Phys. 91, 48 (2002).
23. G. A. Hebner and C. B. Fleddermann, J. Appl. Phys. 82, 2814 (1997).
24. R. P. Vasquez and A. Madhukar, J. Appl. Phys. 60, 234 (1986).