A new finding on NBTI lifetime model and an investigation on NBTI degradation characteristic for 1.2nm ultra thin oxide

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 704-705

  Chen, Chia Lin ^a   Lin, Y M ^a   Wang, C J ^a   Wu, Kenneth ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN DIFFUSION; NBTI LIFETIME; POWER LAW; ULTRA THIN OXIDES;

DIFFUSION; EXTRAPOLATION; HYDROGEN; MATHEMATICAL MODELS;

THIN FILM TRANSISTORS;

EID: 28744431903     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. N.Kimizuka, et.al., Symp. on VLSI Tech. p.73, 1999
2. M.Ershov, "Transient effects and characterization methodology of negative bias temperature instability in pMOS transistors," IEEE IRPS, p.606, 2003.
3. H. Aono, "Modeling of NBTI Degradation and Its Impact on Electric Field Dependence of the Lifetime", IEEE IRPS. p.23, 2004.
4. S.Chakravarthi, " A Comprehensive Framework For Predictive Modeling of Negative Bias Temperature Instability" IEEE IRPS, p.273, 2004.