On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy?

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 1-9

  Mahapatra, S ^a   Ahmed, K ^b   Varghese, D ^a,c   Islam, A E ^c   Gupta, G ^a   Madhav, L ^a   Saha, D ^a   Alam, M A ^c  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b APPLIED MATERIALS INC   (United States)

^c PURDUE UNIVERSITY   (United States)

Author keywords

Hole trapping; Interface traps; NBTI; Plasma and thermal nitridation; Reaction diffusion model

Indexed keywords

ELECTRIC INSULATING MATERIALS; ELECTRIC VARIABLES MEASUREMENT; MATHEMATICAL MODELS; SILICON COMPOUNDS; THRESHOLD VOLTAGE;

HOLE TRAPPING; INTERFACE TRAPS; PLASMA AND THERMAL NITRIDATION; REACTION-DIFFUSION MODEL;

MOSFET DEVICES;

EID: 34548740258     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369860     Document Type: Conference Paper

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