Physical mechanism and gate insulator material dependence of generation and recovery of negative-bias temperature instability in p-MOSFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 7, 2007, Pages 1672-1680

  Varghese, Dhanoop ^a   Gupta, Gaurav ^a   Lakkimsetti, Leela Madhav ^a   Saha, Dipankar ^a   Ahmed, Khaleb ^b   Nouri, Faran ^b   Mahapatra, Souvik ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b APPLIED MATERIALS INC   (United States)

Author keywords

Charge pumping (CP); Fractional recovery (FR); Hole trapping; Interface traps; Negative bias temperature instability (NBTI); On the fly IDLIN; Reaction diffusion (R D) model; Thermal and plasma oxynitrides

Indexed keywords

CHARGE PUMPING; FRACTIONS RECOVERY; GATE DIELECTRIC PROCESSING; INTERFACE TRAPS; NEGATIVE-BIAS TEMPERATURE INSTABILITY;

DEGRADATION; ELECTRIC INSULATORS; GATES (TRANSISTOR); HOLE TRAPS; NITRIDATION; TEMPERATURE;

MOSFET DEVICES;

EID: 34447511510     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.899425     Document Type: Article

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