Investigation of nitrogen-originated NBTI mechanism in SiOn with high-nitrogen concentration

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 454-460

  Sakuma, K ^a   Matsushita, D ^a   Muraoka, K ^a   Mitani, Y ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION MECHANISM; FABRICATION PROCESS; NITROGEN CONCENTRATION; NITROGEN INCORPORATION;

NITRIDATION; RELIABILITY; SILICON COMPOUNDS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

THIN FILMS;

EID: 34250723310     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251261     Document Type: Conference Paper

References (12)

1. S. S. Tan, T. P. Chen, J. M. Soon, K. P. Loh, C. H. Ang, W. Y. Teo and L. Chan, "Neighboring effect in nitrogen-enhanced negative bias temperature instability" in Proceedings of International Conference on Solid State Device and Materials, 2003, pp. 70-71
2. Y. Mitani, M. Nagamine, H. Satake and A. Toriumi, "NBTI Mechanism in Ultra-thin Gate Dielectric -Nitrogen-originated Mechanism in SiON-" in Proceedings of IEDM Tech. Digest, 2002, pp. 509-512
3. S. S. Tan, T. P. Chen, J. M. Soon, K. P. Loh, C. H. Ang and L. Chan, "Nitrogen-enhanced negative bias temperature instability: An insight by experiment and first-principle calculations" Appl. Phys. Lett., 82, No.12, 2003, pp. 1881-1883
4. th bi-annual INFOS Conference, 2005, F 237
5. C. H. Liu, M. T. Lee, C. Y. Lin, J. Chen, K. Schruefer, J. Brighten, N. Rovedo, T. B. Hook, M. V. Khare, S. F. Huang, C. Wann, T. C. Chen and T. H. Ning, "Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics" in Proceedings of IEDM Tech. Digest, 2001, pp. 861-864
6. Y. Mitani, "Influence of nitrogen in ultra-thin SiON on negative bias temperature instability under AC stress" in Proceedings of IEDM Tech. Digest, 2004, pp. 117-120
7. D. Matsushita, K. Muraoka, Y. Nakasaki, K. Kato, S. Inumiya, K. Eguchi and M. Takayanagi, "Novel Fabrication Process to Realize Ultra-thin(EOT=0.7nm) and Ultra-low Leakage SiON Gate Dielectrics" in Symposium on VLSI Technology, Digest of Technical Papers, 2004, pp. 172-173
8. K. O. Jeppson and C. M. Svensson, "Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices" J. Appl. Phys., 48, (5), 1977, pp. 2004-2014
9. P. A. Kraus, K. Ahmed, T. C. Chua, M. Ershov, H. Karbasi, C. S. Olsen, F. Nouri, J. Holland, R, Zhao, G. Miner and A.Lepert, "Low-energy Nitrogen Plasmas for 65-nm node Oxynitride Gate Dielectrics: A Correlation of Plasma Characteristics and Device Parameters" in Symposium on VLSI Technology, Digest of Technical Papers, 2003, pp. 143-144
10. S. Tsujikawa, T. Mine, K. Watanabe, Y. Shimamoto, R. Tsuchiya, K. Ohnishi, T. Onai, J. Yugami and S. Kimura, "Negative Bias Temperature Instability of pMOSFETs with Ultra-thin SiON Gate Dielectrics" in Proceedings of International Reliability Physics Symposium, 2003, pp. 183-188
11. I. Hirano, T. Yamaguchi, Y. Mitani, R, lijima, K. Sekine, M. Takayanagi, K. Eguchi and N. Fukushima, "Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON" in Proceedings of International Conference on Solid State Device and Materials, 2005, pp. 20-21
12. max with ultra-thin and ultralow-leakage SiN-based SiON gate dielectrics" in Proceedings of IEDM Tech. Digest, 2005, pp. 847-851