Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I DLIN technique

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 809-812

  Kumar, E N ^a   Maheta, V D ^a   Purawat, S ^a   Islam, A E ^b   Olsen, C ^c   Ahmed, K ^c   Alam, M A ^b   Mahapatra, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b PURDUE UNIVERSITY   (United States)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; NITRIDES; NONMETALS; SILICON;

ON-THE-FLY; P-MOSFETS; PHYSICAL MECHANISMS; SILICON OXYNITRIDE; ULTRA-FAST;

OPTICAL TRANSFER FUNCTION;

EID: 40549089709     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419071     Document Type: Conference Paper

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