Influence of nitrogen in ultra-thin SiON on negative bias temperature instability under AC stress

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 117-120

  Mitani, Yuichiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DIFFUSION; DISSOCIATION; ELECTRIC CURRENTS; ELECTRODES; NITROGEN; PASSIVATION; SILANES; STRESSES; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; ULTRATHIN FILMS; HYDROGEN; NEGATIVE BIAS TEMPERATURE INSTABILITY; NEGATIVE TEMPERATURE COEFFICIENT; NITROGEN PLASMA; PLASMA DIAGNOSTICS; PLASMA STABILITY; SILICON COMPOUNDS;

NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); PLASMA NITRIDATION; RECOVERY REACTION COEFFICIENTS; STRESS VOLTAGE;

SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

AC STRESS; BIAS-TEMPERATURE INSTABILITY; DC STRESS; LOCK-IN; NEGATIVE BIAS; NITROGEN ATOM; NITROGEN INCORPORATION; ULTRA-THIN;

EID: 21644472788     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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