Expérimental evidence of inelastic tunneling in stress-induced leakage current

IEEE Transactions on Electron Devices

Volumn 46, Issue 2, 1999, Pages 335-341

  Takagi, Shin Ichi ^a   Yasuda, Naoki ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Leakage currents; MOS devices; Semiconductor device reliability; Tunneling

Indexed keywords

CHARGE CARRIERS; ELECTRON TUNNELING; GATES (TRANSISTOR); INDUCED CURRENTS; LEAKAGE CURRENTS; QUANTUM THEORY;

STRESS INDUCED LEAKAGE CURRENTS (SILC);

MOSFET DEVICES;

EID: 0033080259     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.740899     Document Type: Article

References (20)

1. K. Naruke, S. Taguchi, and M. Wada, in IEDM Tech. Dig., 1988, pp. 424-427.
2. J. Maserjian and N. Zamani, "Observation of positively charged state generation near the S1/S1O2 interface during Fowler-Nordheim tunneling," J. Vac. Sci. Technol., vol. 20, pp. 743-746, 1982.
3. 2 films," IEEE Trans. Electron Devices, vol. 35, pp. 2259-2267, 1988.
4. R. Mozzami and C. Hu, "Stress-induced current in thin silicon dioxide films," in IEDM Tech. Dig., 1992, pp. 139-142.
5. D. J. Dumin and J. R. Maddux, "Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides," IEEE Trans. Electron Devices, vol. 40, pp. 986-993, 1993.
6. N. Yasuda, N. Patel, and A. Toriumi, "A two-step tunneling model for the stress induced leakage currents in thin silicon dioxide films," in Ext. Abst. Solid State Dev. Mater., 1993, pp. 847-850.
7. D. J. DiMaria and E. Cartier, "Mechanism for stress-induced leakage currents in thin silicon dioxide films," J. Appl. Phys., vol. 78, pp. 3883-3894, 1995.
8. G. J. Hemink, K. Shimizu, S. Aritome, and R. Shirota, "Trapped hole enhanced stress induced leakage currents in NAND EEPROM tunnel oxides," in IEEE Int. Reliab. Phys. Symp., 1996, pp. 117-121.
9. K. Sakakibara, N. Ajika, M. Hatanaka, and H. Miyoshi, "A quantitative analysis of stress induced excess current (SIEC) in SiC>2 films," in IEEE Int. Reliab. Phys. Symp., 1996, pp. 100-107.
10. K. Sakakibara, N. Ajika, K. Eikyu, K. Ishikawa, and H. Miyoshi, "A quantitative analysis of time-decay reproducible stress-induced leakage current in SiC>2 films," IEEE Trans. Electron Devices, vol. 44, pp. 1002-1008, 1997.
11. C. Cheng, C. Hu, and R. W. Brodersen, "Quantum yield of electron impact ionization in silicon," J. Appl. Phys., vol. 57, pp. 302-309, 1985.
12. S.-H. Lee, B.-J. Cho, J.-C. Kirn, and S.-H. Choi, "Quasibreakdown of ultrathin gate oxide under high field stress," in IEDM Tech. Dig., 1994, pp. 605-608.
13. T. Yoshida, S. Miyazaki, and M. Hirose, "Analytical modeling of quasibreakdown of ultrathin gate oxides under constant current stressing," in Ext. Abst. Solid State Dev. Mater., 1996, pp. 539-541.
14. A. Modelli, "Valence band electron tunneling in metal-oxide-silicon structures," Appl. Surf. Sei, vol. 30, pp. 298-303, 1987.
15. E. Rosenbaum and L. F. Register, "Mechanism of stress-induced leakage current in MOS capacitors," IEEE Trans. Electron Devices, vol. 44, pp. 317-323, 1997.
16. J. K. Rudra and W. B. Fowler, "Oxygen vacancy and the E( center in crystalline SiO2," Phys. Rev., vol. B 35, pp. 8223-8230, 1987.
17. A. Yokozawa, A. Oshiyama, Y. Miyamoto, and S. Kumashiro, "Oxygen vacancy with large lattice distortion as an origin of leakage current," in IEDM Tech. Dig., 1997, pp. 703-706.
18. M. O. Andersson, Z. Xiao, S. Norrman, and O. Engstrom, "Model based on trap-assisted tunneling for two-level current fluctuations in submicrometer metal-silicon-dioxide-silicon diodes," Phys. Rev. B, vol. 41, pp. 9836-9842, 1990.
19. S. Takagi, N. Yasuda, and A. Toriumi, "A new I-V model for stressinduced leakage current including inelastic tunneling," this issue, pp. 348-354.
20. A. Ghetti, M. A. Alam, J. Bude, and F. Venturi, "Assessment of quantum yield experiments via full band Monte Carlo simulations," in IEDM Tech. Dig., 1997, pp. 873-876.