Impact of bias temperature instability for direct-tunneling ultra-thin gate oxide on MOSFET scaling

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 73-74

  Kimizuka, N ^a   Yamamoto, T ^a   Mogami, T ^a   Yamaguchi, K ^a   Imai, K ^a   Horiuchi, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; HOT CARRIERS; LEAKAGE CURRENTS; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DIRECT TUNNELING ULTRATHIN GATE OXIDE; STRESS VOLTAGE DEPENDENCE;

GATES (TRANSISTOR);

EID: 0033280060     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)