NBTI-Channel Hot Carrier effects in pMOSFETs in advanced CMOS technologies

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1997, Pages 282-286

  La Rosa, G ^a   Guarin, F ^a   Rauch, S ^a   Acovic, A ^a   Lukaitis, J ^a   Crabbe, E ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; HOT CARRIERS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; THERMAL STRESS; TRANSCONDUCTANCE;

HOT HOLE (HH) INJECTION; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI) MECHANISM;

CMOS INTEGRATED CIRCUITS;

EID: 0030646478     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)