Numerical simulation of hydrogen redistribution in thin SiO 2 films under electron injection in high fields

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 627-630

  Gadiyak, G V ^a  

^a INSTITUTE OF COMPUTATIONAL TECHNOLOGIES   (Russian Federation)

Author keywords

Breakdown; Degradation; Height fields; Thin dielectric films

Indexed keywords

CALCULATIONS; CAPACITORS; COMPUTER SIMULATION; DIFFUSION; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; HYDROGEN; MATHEMATICAL MODELS; MOS DEVICES; THIN FILMS;

ELECTRICAL STRESS; ELECTRON INJECTION; HYDROGEN REDISTRIBUTION; POISSON EQUATION; TRANSPORT MODEL;

SILICA;

EID: 0031547167     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00773-8     Document Type: Article

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