Hole energy dependent interface trap generation in MOSFET Si/SiO2 interface

IEEE Electron Device Letters

Volumn 26, Issue 8, 2005, Pages 572-574

  Varghese, D ^a   Mahapatra, S ^a   Alam, M A ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b PURDUE UNIVERSITY   (United States)

Author keywords

Anode hole injection (AHI) model; Charge pumping; Fowler Nordheim (FN); H release model; Interface and bulk traps; MOSFET; Negative bias temperature instability (NBTI); Reaction diffusion (R D) model; Stress induced leakage current (SILC)

Indexed keywords

GATES (TRANSISTOR); HOLE TRAPS; HOT CARRIERS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SILICA; TEMPERATURE;

ANODE HOLE INJECTION (AHI) MODEL; CHARGE PUMPING; FOWLER-NORDHEIM (FN) STRESS; H RELEASE MODEL; INTERFACE AND BULK TRAPS; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); REACTION-DIFFUSION (R-D) MODEL; STRESS INDUCED LEAKAGE CURRENT (SILC);

MOSFET DEVICES;

EID: 23844493372     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.852739     Document Type: Article

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