Broad energy distribution of NBTI-induced interface states in p-MOSFETs with ultra-thin nitrided oxide

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 1-7

  Stathis, J H ^a   LaRosa, G ^b   Chou, A ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

Author keywords

Band edge states; Bulk traps; DCIV; Gated diode; Interface states; LV SILC; Mid gap states; NBTI; Nitrogen; Oxynitride; p MOS; Plasma nitridation; SILC; SiO 2

Indexed keywords

BAND-EDGE STATES; BULK TRAPS; GATED DIODE; INTERFACE STATES; LOW-VOLTAGE STRESS-INDUCED LEAKAGE (LV-SILC); MID-GAP STATES; NEGATIVE-BIAS-TEMPERATURE INSTABILITY (NBTI); PLASMA NITRIDATION;

CORRELATION METHODS; ELECTRON TUNNELING; ELECTRONIC STRUCTURE; FERMI LEVEL; HOLE TRAPS; MOSFET DEVICES; NITRIDES; OXIDATION; REACTION KINETICS; SENSITIVITY ANALYSIS; SILICON COMPOUNDS; THRESHOLD VOLTAGE;

NITROGEN OXIDES;

EID: 3042611441     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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