Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 92-93

  Yang, T ^a,b   Li, M F ^a,b   Shen, C ^a   Ang, C H ^c   Zhu, Chunxiang ^a   Yeo, Y C ^a   Samudra, G ^a   Rustagi, Subhash C ^b   Yu, M B ^b   Kwong, D L ^b,d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c Chartered Semiconductor Manufacturing   (Singapore)

^d The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PASSIVATION; SILICON COMPOUNDS;

CIRCUIT APPLICATIONS; DE-TRAPPING OF HOLE; INTERFACE TRAPS;

MOSFET DEVICES;

EID: 33645470424     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469225     Document Type: Conference Paper

References (9)

1. G.Chen et al, IRPS,p.196 (2003)
2. M.Alam, IEDM, p. 345 (2003)
3. S.Mahapatra et al, IEDM,p. 105 (2004)
4. S.Charkravarthi et al., IRPS,p.273 (2004)
5. V.Huard et al, IRPS,p.40 (2004)
6. W.Abadeer et al, IRPS,p.l7 (2003)
7. C.Shen et al, IEDM,p.733 (2004)
8. Y.Nissan-Cohen et al, JAP,v.58, p.2252 (1985)
9. H.Aono et al, IRPS, p.23 (2004)