Revised model of thermally stimulated current in mos capacitors

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 1826-1833

  Fleetwood, Daniel M ^a,b  

^a IEEE   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CAPACITORS; CARRIER CONCENTRATION; ELECTRIC CURRENT MEASUREMENT; MATHEMATICAL MODELS; RADIATION EFFECTS; RADIATION HARDENING; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

CHARGE TRAPPING; METAL OXIDE SEMICONDUCTOR (MOS) CAPACITORS; THERMALLY STIMULATED CURRENT (TSC);

MOS DEVICES;

EID: 0031342646     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.658949     Document Type: Article

References (41)

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