Bulk Trap Formation by High Temperature Annealing of Buried Thermal Oxides

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1708-1716

  Stahlbush, R E ^a   Brown, G A ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ENCAPSULATION; HIGH TEMPERATURE EFFECTS; INTEGRATED CIRCUIT LAYOUT; ION IMPLANTATION; SILICON ON INSULATOR TECHNOLOGY;

BULK TRAP FORMATION; CRYOGENIC DETRAPPING TECHNIQUE; SEPARATION BY IMPLANTATION OF OXYGEN; THERMAL OXIDES;

SILICA;

EID: 0029512516     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.488769     Document Type: Article

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