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Physical Review Letters

Volumn 69, Issue 5, 1992, Pages 820-823

Determining the energy distribution of traps in insulating thin films using the thermally stimulated current technique

(3) Miller, S L a Fleetwood, D M a McWhorter, P J a

a SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000629697 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.69.820 Document Type: Article

Times cited : (41)

References (23)

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- For a review of hole traps in SiO2, see F. B. McLean, H. E. Boesch, Jr., and T. R. Oldham, in Ionizing Radiation Effects in MOS Devices and Circuits, edited by T. P. Ma and P. V. Dressendorfer (Wiley, New York, 1989), pp. 87–192.

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15
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- Since we are only interested in an order-of-magnitude estimate for a, the specific values chosen for mstar and g are not critical. The value of σt chosen is consistent with an attractive Coulombic trapping site, as shown on p. 22 of Ref. [8].

16
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- This presumes that TSC measurements are performed with an electric field large enough in magnitude and of appropriate polarity (usually negative) that the charge is counted accurately during TSC measurements (Ref. [13]).

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- Reber, R.A.¹ Fleetwood, D.M.²

19
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- The silicon surface potential and the work function terms are dropped since the applied bias is much greater than either. Also, the radiation-induced charge is assumed to be concentrated near the Si-SiO2 interface, as discussed in Ref. [9].

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- McWhorter, P.J.¹ Miller, S.L.² Miller, W.M.³

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- Characteristics of Hole Traps in Dry and Pyrogenic Gate Oxides
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- Miller, S.L.¹ Fleetwood, D.M.² McWhorter, P.J.³

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