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Volumn 69, Issue 5, 1992, Pages 820-823

Determining the energy distribution of traps in insulating thin films using the thermally stimulated current technique

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Indexed keywords


EID: 0000629697     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.69.820     Document Type: Article
Times cited : (41)

References (23)
  • 4
    • 0002947095 scopus 로고
    • edited by, G. M. Sessler, Topics in Applied Physics Vol. 33, Springer-Verlag, Berlin
    • (1979) Electrets , pp. 81-215
    • van Turnhout, J.1
  • 5
    • 84927395607 scopus 로고
    • in Thermally Stimulated Relaxation, in, edited by, P. Braunlich, Topics in Applied Physics Vol. 37, Springer-Verlag, Berlin
    • (1980) Solids
  • 13
    • 84927449959 scopus 로고    scopus 로고
    • For a review of hole traps in SiO2, see F. B. McLean, H. E. Boesch, Jr., and T. R. Oldham, in Ionizing Radiation Effects in MOS Devices and Circuits, edited by T. P. Ma and P. V. Dressendorfer (Wiley, New York, 1989), pp. 87–192.
  • 15
    • 84927449957 scopus 로고    scopus 로고
    • Since we are only interested in an order-of-magnitude estimate for a, the specific values chosen for mstar and g are not critical. The value of σt chosen is consistent with an attractive Coulombic trapping site, as shown on p. 22 of Ref. [8].
  • 16
    • 84927449955 scopus 로고    scopus 로고
    • This presumes that TSC measurements are performed with an electric field large enough in magnitude and of appropriate polarity (usually negative) that the charge is counted accurately during TSC measurements (Ref. [13]).
  • 19
    • 84927449950 scopus 로고    scopus 로고
    • The silicon surface potential and the work function terms are dropped since the applied bias is much greater than either. Also, the radiation-induced charge is assumed to be concentrated near the Si-SiO2 interface, as discussed in Ref. [9].


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