Effects of reliability screens on mos charge trapping

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 1, 1996, Pages 865-872

  Shaneyfelt, M R ^a   Winokur, P S ^a   Fleetwood, D M ^a   Schwank, J R ^a   Reber Jr , R A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; HIGH TEMPERATURE EFFECTS; RADIATION EFFECTS; RADIATION HARDENING; THERMAL STRESS; TRANSISTORS;

CHARGE TRAPPING; RELIABILITY SCREENS;

MOS DEVICES;

EID: 0030173038     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.510726     Document Type: Article

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