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Volumn 60, Issue 23, 1992, Pages 2883-2885

Long-term annealing study of midgap interface-trap charge neutrality

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0038089462     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.106807     Document Type: Article
Times cited : (46)

References (36)
  • 2
    • 84950999055 scopus 로고    scopus 로고
    • Here “interface traps” are taken to be those defects that exchange charge with the underlying Si as the surface potential changes during current-voltage (I-V) measurements, in contrast to oxide-trap charge which does not change its charge state on the time scale [formula omitted] of the I-V measurements
  • 7
    • 84951068408 scopus 로고    scopus 로고
    • Alternatively, one could estimate the interface-trap density from the change in the subthreshold slope of the I-V curve, which produces results similar to the McWhorter-Winokur method (Refs. 7 and 8)
  • 20
    • 84951176767 scopus 로고    scopus 로고
    • An excess negative charge is not expected in these oxides after postirradiation annealing because these experimental conditions do not favor electron injection and population of low cross-section neutral electron traps (Refs. 19 and 20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.