Effects Of Burn-In On Radiation Hardness

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2550-2559

  Shaneyfelt, M R ^a   Fleetwood, D M ^a   Schwank, J R ^a   Meisenheimer, T L ^a   Winokur, P S ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC NETWORK PARAMETERS; ELECTROSTATICS; INTEGRATED CIRCUIT TESTING; INTEGRATED CIRCUITS; INTERFACES (MATERIALS); IRRADIATION; LEAKAGE CURRENTS; MOS DEVICES; THERMAL EFFECTS; THERMAL STRESS; TRANSISTORS;

BURN IN; RADIATION HARDNESS;

RADIATION EFFECTS;

EID: 0028711776     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340615     Document Type: Article

References (25)

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