Trapping-Detrapping Properties of Irradiated Ultra-Thin Simox Buried Oxides

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 2108-2113

  Paillet, Philippe ^a   Autran, Jean Luc ^b   Leray, Jean Luc ^b   Aspar, Bernard ^c   Auberton Herve, André Jacques ^d  

^a CEA DIF   (France)

^b LETI ^*

^c CEA LETI   (France)

^d PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRONS; ION IMPLANTATION; MOSFET DEVICES; OXIDES; THERMAL EFFECTS; ULTRATHIN FILMS;

ELECTRON TRAPPING; HOLE TRAPPING; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX); SIMOX BURIED OXIDES;

RADIATION EFFECTS;

EID: 0029545449     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.489260     Document Type: Article

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