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Applied Physics Letters

Volumn 60, Issue 16, 1992, Pages 2008-2010

Trapped-hole annealing and electron trapping in metal-oxide-semiconductor devices

(3) Fleetwood, D M a Reber Jr , R A a Winokur, P S a

a SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001480812 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.107126 Document Type: Article

Times cited : (30)

References (30)

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