Molecular layer epitaxy by real-time optical process monitoring

Applied Surface Science

Volumn 112, Issue , 1997, Pages 38-47

  Bachmann, K J ^a,b   Hopfner C ^a   Sukidi, N ^a   Miller, A E ^a   Harris, C ^a   Aspnes, D E ^b   Dietz, N A ^b   Tran, H T ^b   Beeler, S ^b   Ito, K ^b   Banks, H T ^b   Rossow, U ^c  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONTROL; HIGH PRESSURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SPECTROSCOPY; SURFACE PHENOMENA; SURFACE ROUGHNESS; THIN FILMS;

ATOMIC LAYER EPITAXY; HETEROEPITAXIAL FILM; OPTICAL PROCESS MONITORING; POLARIZED REFLECTANCE SPECTROSCOPY; PULSED CHEMICAL BEAM EPITAXY;

MOLECULAR BEAM EPITAXY;

EID: 0031546822     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00975-0     Document Type: Article

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