A proposed atomic-layer-deposition of germanium on Si surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1609-1613

  Sugahara, Satoshi ^a   Uchida, Yasutaka ^b   Kitamura, Takuya ^a   Nagai, Tomonori ^b   Matsuyama, Motohiro ^c   Hattori, Takeo ^c   Matsumura, Masakiyo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TEIKYO UNIVERSITY OF SCIENCE   (Japan)

^c TOKYO CITY UNIVERSITY   (Japan)

Author keywords

Atomic hydrogen; Atomic layer epitaxy; Germanium surface; Germanium tetrachloride; Precursor chemistry; Silicon surface

Indexed keywords

EID: 0007238260     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1609     Document Type: Article

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