|
|
Volumn 112, Issue , 1997, Pages 122-126
|
|
Quantum wire structures incorporating (GaAs) m (GaP) n short-period superlattice fabricated by atomic layer epitaxy
a
|
|
Author keywords
Atomic layer epitaxy; PL (photoluminescence); Quantum wire; Selective growth; Superlattice; TEM (transmission electron microscopy)
|
|
Indexed keywords
EMISSION SPECTROSCOPY;
EPITAXIAL GROWTH;
NANOSTRUCTURED MATERIALS;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR SUPERLATTICES;
TRANSMISSION ELECTRON MICROSCOPY;
ATOMIC LAYER EPITAXY;
COMPOSITION CONTROL;
LATERAL CONFINED SYSTEMS;
PHOTOLUMINESCENCE MEASUREMENTS;
QUANTUM NANOSTRUCTURES;
SHORT PERIOD SUPERLATTICE;
SEMICONDUCTOR QUANTUM WIRES;
|
|
EID: 0031546926
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(96)00987-7 Document Type: Article |
|
Times cited : (10)
|
|
References (13)
|
