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Journal of Crystal Growth

Volumn 180, Issue 1, 1997, Pages 15-21

Atomic layer epitaxy of AlP and its application to X-ray multilayer mirror

(5) Ishii, M a,c Iwaia, S a Kawata, H b Ueki, T a Aoyagi, Y a

a INST OF PHYS AND CHEMICAL RESEARCH (Japan)

b Nippon Pillar Packing Co Ltd (Japan)

c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

Author keywords

ALE; AlP; GaP; Surface smoothing; X ray multilayer mirror

Indexed keywords

LIGHT ABSORPTION; MIRRORS; OPTICAL MULTILAYERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS;

ALUMINUM PHOSPHIDE; ATOMIC LAYER EPITAXY (ALE); GALLIUM PHOSPHIDE; X RAY MULTILAYER MIRRORS;

EPITAXIAL GROWTH;

EID: 0031233751 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00198-X Document Type: Article

Times cited : (51)

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