Effects of intermediate zinc pulses on properties of TiN and NbN films deposited by atomic layer epitaxy

Applied Surface Science

Volumn 120, Issue 3-4, 1997, Pages 199-212

  Ritala, Mikko ^a   Asikainen, Timo ^a,c   Leskelä, Markku ^a   Jokinen, Janne ^a   Lappalainen, Reijo ^a   Utriainen, Mikko ^b   Niinistö, Lauri ^b   Ristolainen, Eero ^b,d  

^a UNIVERSITY OF HELSINKI   (Finland)

^b AALTO UNIVERSITY   (Finland)

^c Microchemistry Ltd   (Finland)

^d TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

Atomic layer epitaxy; Niobium nitride; Thin film analysis; Titanium nitride

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GRAIN SIZE AND SHAPE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; X RAY CRYSTALLOGRAPHY; ZINC;

ATOMIC LAYER EPITAXY; DEUTERON INDUCED REACTIONS; ELASTIC RECOIL DETECTION ANALYSIS; NIOBIUM NITRIDE; NUCLEAR RESONANCE BROADENING; PROTON BACKSCATTERING SPECTROMETRY; PROTON INDUCED X RAY EMISSION;

NITRIDES;

EID: 0031382041     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00387-5     Document Type: Article

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