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Volumn 173, Issue 3-4, 1997, Pages 343-351

Evaluation of thin Si films grown on Ge (1 0 0) by synchrotron-radiation-excited atomic layer epitaxy and chemical vapor deposition from Si2H6

(1) Akazawa, Housei a

a NTT CORPORATION (Japan)

Author keywords

Disilane; Photoepitaxy of Si; Surfactant; Synchrotron radiation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; HYDROGEN; MORPHOLOGY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILANES; SURFACE ACTIVE AGENTS; SYNCHROTRON RADIATION; THIN FILMS;

ATOMIC LAYER EPITAXY; PHOTOEPITAXY;

SEMICONDUCTING FILMS;

EID: 0031125751 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)01042-1 Document Type: Article

Times cited : (7)

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