Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

Applied Surface Science

Volumn 112, Issue , 1997, Pages 98-101

  McIntosh, F G ^a   Piner, E L ^a   Roberts, J C ^a   Behbehani, M K ^a   Aumer, M E ^a   El Masry, N A ^a   Bedair, S M ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; OPTIMIZATION; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING FILMS; SINGLE CRYSTALS; TERNARY SYSTEMS;

ATOMIC LAYER EPITAXY; GALLIUM INDIUM NITRIDE; INDIUM INCORPORATION; INDIUM NITRIDES; ROTATING SUSCEPTOR; SATURATION LIMIT; SINGLE CRYSTAL FILMS;

NITRIDES;

EID: 0031546911     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00992-0     Document Type: Article

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