Optical approaches to determine near-surface compositions during epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 3, 1996, Pages 960-966

  Aspnes, D E ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000307569     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580422     Document Type: Article

References (23)

1. This topic has been the subject of various recent conferences, as for example, the Engineering Research Foundation International Conference on Monitoring and Control Techniques for Intelligent Epitaxy, Banff, Alberta, Canada, 11-16 June 1995.
2. See, for example, C. R. Abernathy, J. Vac. Sci. Technol. A 11, 869 (1993); A. C. Jones, J. Cryst. Growth 129, 728 (1993).
3. See, for example, C. R. Abernathy, J. Vac. Sci. Technol. A 11, 869 (1993); A. C. Jones, J. Cryst. Growth 129, 728 (1993).
4. D. E. Aspnes, Surf. Sci. 307, 1017 (1994); IEEE J. Select. Topics Quantum Electron. 1, 1054 (1995).
5. D. E. Aspnes, Surf. Sci. 307, 1017 (1994); IEEE J. Select. Topics Quantum Electron. 1, 1054 (1995).
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7. G. Jungk, Phys. Status Solidi A 34, 69 (1976).
8. J. B. Theeten, F. Hottier, and J. Hallais, J. Cryst. Growth 46, 245 (1979).
9. R. H. Hartley, US Patent No. 4,770,895 (13 September 1988).
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11. D. E. Aspnes, J. Opt. Soc. Am. 10, 974 (1993).
12. D. E. Aspnes, W. E. Quinn, M. C. Tamargo, M. A. A. Pudensi, S. A. Schwarz, M. J. S. P. Brasil, R. E. Nahony, and S. Gregory, Appl. Phys. Lett. 60, 1244 (1992).
13. S. D. Murthy, I. Bhat, B. Johs, S. Pittal, and P. He, J. Electron. Mater. 24, 1087 (1995).
14. F. K. Urban III and M. F. Tabet, J. Vac. Sci. Technol. A 11, 976 (1993).
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16. N. Kobayashi and Y. Kobayashi, Thin Solid Films 225, 32 (1993); N. Dietz, A. Miller, and K. J. Bachmann, J. Vac. Sci. Technol. A 13, 153 (1995).
17. N. Kobayashi and Y. Kobayashi, Thin Solid Films 225, 32 (1993); N. Dietz, A. Miller, and K. J. Bachmann, J. Vac. Sci. Technol. A 13, 153 (1995).
18. The algorithm given in Ref. 6 is based on the logarithmic decrement of |ρ|, which for evaluation requires the deposition rate to be known. However, the implication of the associated text is that pertaining to Eq. (8d).
19. R. H. Hartley, M. A. Folkard, D. Carr, P. J. Orders, D. Rees, I. K. Varga, V. Kumar, G. Shen, T. A. Steele, H. Buskes, and J. B. Lee, J. Vac. Sci. Technol. B 10, 1410 (1992).
20. D. E. Aspnes, M. C. Tamargo, M. J. S. P. Brasil, R. E. Nahory, and S. A. Schwarz, J. Vac. Sci. Technol. A 12, 1180 (1994).
21. G. N. Maracas, C. H. Kuo, S. Anand, R. Droopad, G. R. L. Sohie, and T. Levola, J. Vac. Sci. Technol. A 13, 727 (1995).
22. D. E. Aspnes, J. Opt. Soc. Am. 70, 1275 (1980).
23. D. E. Aspnes, W. E. Quinn, and S. Gregory, Appl. Phys. Lett. 56, 2569 (1990).