High-performance ZnO thin-film transistor fabricated by atomic layer deposition

Semiconductor Science and Technology

Volumn 26, Issue 8, 2011, Pages

  Oh, Byeong Yun ^a,b   Kim, Young Hwan ^a   Lee, Hee Jun ^a   Kim, Byoung Yong ^a   Park, Hong Gyu ^a   Han, Jin Woo ^a   Heo, Gi Seok ^b   Kim, Tae Won ^b   Kim, Kwang Young ^b   Seo, Dae Shik ^a  

^a Yonsei University   (South Korea)

^b Korea Institute of Industrial Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNEL LAYERS; ACTIVE LAYER; CURRENT RATIOS; DEPOSITION TEMPERATURES; FIELD-EFFECT MOBILITIES; SUBTHRESHOLD; ZNO; ZNO FILMS;

ATOMIC LAYER DEPOSITION; CARRIER CONCENTRATION; DIELECTRIC FILMS; FABRICATION; GATE DIELECTRICS; GATES (TRANSISTOR); METALLIC FILMS; THRESHOLD LOGIC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 80052004656     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/8/085007     Document Type: Article

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