High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)

Organic Electronics

Volumn 8, Issue 6, 2007, Pages 718-726

  Zhang, Xiao Hong ^a   Domercq, Benoit ^a   Wang, Xudong ^b   Yoo, Seunghyup ^a   Kondo, Takeshi ^c   Wang, Zhong Lin ^b   Kippelen, Bernard ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Al2O3; Atomic layer deposition (ALD); ITO; Organic field effect transistors (OFETs); Pentacene

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; ELECTRODES; THRESHOLD VOLTAGE; TRANSISTORS; X RAY DIFFRACTION;

OCTADECYLTRICHLOROSILANE (OTS); ORGANIC FIELD-EFFECT TRANSISTORS (OFETS); PENTACENE; ZERO TURN ON VOLTAGE;

ALUMINA;

EID: 35348989871     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2007.06.009     Document Type: Article

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