Enhanced stability against bias-stress of metal-oxide thin film transistors deposited at elevated temperatures

Applied Physics Letters

Volumn 99, Issue 12, 2011, Pages

  Fakhri, M ^a   Grrn, P ^a   Weimann, T ^b   Hinze, P ^b   Riedl, T ^a  

^a UNIVERSITY OF WUPPERTAL   (Germany)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT GAS; BIAS STRESS; DC MAGNETRON SPUTTERING; DEFECT STATE; DRIVER ELECTRONICS; ELEVATED TEMPERATURE; ENHANCED STABILITY; IN-SITU; METAL OXIDE THIN FILMS; ORGANIC LIGHT EMITTING DIODE DISPLAY; REDUCED SENSITIVITY; REFERENCE DEVICES; ROOM TEMPERATURE; SUBSTRATE HEATING;

ADSORPTION; DEFECT DENSITY; FILM PREPARATION; ORGANIC LIGHT EMITTING DIODES (OLED); THIN FILMS; TIN; VAPOR DEPOSITION;

THIN FILM TRANSISTORS;

EID: 80053429817     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3643040     Document Type: Article

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