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Volumn 95, Issue 22, 2009, Pages

Low-voltage solution-processed n-channel organic field-effect transistors with high- k HfO2 gate dielectrics grown by atomic layer deposition

(4) Tiwari, Shree Prakash a Zhang, Xiao Hong a Potscavage, William J a Kippelen, Bernard a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUTYRIC ACIDS; HAFNIUM DIOXIDE GATE DIELECTRIC; HIGH-K HFO; LOW OPERATING VOLTAGE; LOW-VOLTAGE; METHYL ESTERS; N-CHANNEL; ON/OFF RATIO; ORGANIC FIELD-EFFECT TRANSISTORS; SOLUTION-PROCESSED; SUBTHRESHOLD SLOPE;

DIELECTRIC MATERIALS; ELECTRON MOBILITY; ESTERS; FATTY ACIDS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 71949126839 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3269579 Document Type: Article

Times cited : (34)

References (19)

1
- 0032537718
- An electrophoretic ink for all-printed reflective electronic displays
- DOI 10.1038/28349
- B. Comiskey, J. D. Albert, H. Yoshizawa, and J. Jacobson, Nature (London) 0028-0836 394, 253 (1998). 10.1038/28349 (Pubitemid 28335031)
- (1998) Nature , vol.394 , Issue.6690 , pp. 253-255
- Comiskey, B.¹ Albert, J.D.² Yoshizawa, H.³ Jacobson, J.⁴

2
- 0001144959
- Organic smart pixels
- DOI 10.1063/1.121736, PII S0003695198015289
- A. Dodabalapur, Z. Bao, A. Makhija, J. G. Laquindanum, V. R. Raju, Y. Feng, H. E. Katz, and J. Rogers, Appl. Phys. Lett. 0003-6951 73, 142 (1998). 10.1063/1.121736 (Pubitemid 128673706)
- (1998) Applied Physics Letters , vol.73 , Issue.2 , pp. 142-144
- Dodabalapur, A.¹ Bao, Z.² Makhija, A.³ Laquindanum, J.G.⁴ Raju, V.R.⁵ Feng, Y.⁶ Katz, H.E.⁷ Rogers, J.⁸

3
- 0038307224
- 0003-6951. 10.1063/1.1579554
- P. F. Baude, D. A. Ender, M. A. Haase, T. W. Kelley, D. V. Muyres, and S. D. Theiss, Appl. Phys. Lett. 0003-6951 82, 3964 (2003). 10.1063/1.1579554
- (2003) Appl. Phys. Lett. , vol.82 , pp. 3964
- Baude, P.F.¹ Ender, D.A.² Haase, M.A.³ Kelley, T.W.⁴ Muyres, D.V.⁵ Theiss, S.D.⁶

4
- 23244459722
- Organic thin-film electronics from vitreous solution-processed rubrene hypereutectics
- DOI 10.1038/nmat1426
- N. Stingelin-Stutzmann, E. Smits, H. Wondergem, C. Tanase, P. Blom, P. Smith, and D. De Leeuw, Nature Mater. 1476-1122 4, 601 (2005). 10.1038/nmat1426 (Pubitemid 41092689)
- (2005) Nature Materials , vol.4 , Issue.8 , pp. 601-606
- Stingelin-Stutzmann, N.¹ Smits, E.² Wondergem, H.³ Tanase, C.⁴ Blom, P.⁵ Smith, P.⁶ De Leeuw, D.⁷

5
- 33645648893
- 1476-1122. 10.1038/nmat1612
- I. McCulloch, M. Heeney, C. Bailey, K. Genevicius, I. Macdonald, M. Shkunov, D. Sparrowe, S. Tierney, R. Wagner, W. M. Zhang, M. L. Chabinyc, R. J. Kline, M. D. McGehee, and M. F. Toney, Nature Mater. 1476-1122 5, 328 (2006). 10.1038/nmat1612
- (2006) Nature Mater. , vol.5 , pp. 328
- McCulloch, I.¹ Heeney, M.² Bailey, C.³ Genevicius, K.⁴ MacDonald, I.⁵ Shkunov, M.⁶ Sparrowe, D.⁷ Tierney, S.⁸ Wagner, R.⁹ Zhang, W.M.¹⁰ Chabinyc, M.L.¹¹ Kline, R.J.¹² McGehee, M.D.¹³ Toney, M.F.¹⁴

6
- 59649111119
- 0028-0836. 10.1038/nature07727
- H. Yan, Z. H. Chen, Y. Zheng, C. Newman, J. R. Quinn, F. Dotz, M. Kastler, and A. Facchetti, Nature (London) 0028-0836 457, 679 (2009). 10.1038/nature07727
- (2009) Nature (London) , vol.457 , pp. 679
- Yan, H.¹ Chen, Z.H.² Zheng, Y.³ Newman, C.⁴ Quinn, J.R.⁵ Dotz, F.⁶ Kastler, M.⁷ Facchetti, A.⁸

7
- 20544476725
- 2 layer as gate insulator
- DOI 10.1002/adfm.200400570
- L. A. Majewski, R. Schroeder, and M. Grell, Adv. Funct. Mater. 1616-301X 15, 1017 (2005). 10.1002/adfm.200400570 (Pubitemid 40844288)
- (2005) Advanced Functional Materials , vol.15 , Issue.6 , pp. 1017-1022
- Majewski, L.A.¹ Schroeder, R.² Grell, M.³

8
- 35348906114
- Low-voltage organic thin-film transistors with large transconductance
- DOI 10.1063/1.2794702
- H. Klauk, U. Zschieschang, and M. Halik, J. Appl. Phys. 0021-8979 102, 074514 (2007). 10.1063/1.2794702 (Pubitemid 47587890)
- (2007) Journal of Applied Physics , vol.102 , Issue.7 , pp. 074514
- Klauk, H.¹ Zschieschang, U.² Halik, M.³

9
- 54949124583
- 0935-9648. 10.1002/adma.200800810
- O. Acton, G. Ting, H. Ma, J. W. Ka, H. L. Yip, N. M. Tucker, and A. K. Y. Jen, Adv. Mater. 0935-9648 20, 3697 (2008). 10.1002/adma.200800810
- (2008) Adv. Mater. , vol.20 , pp. 3697
- Acton, O.¹ Ting, G.² Ma, H.³ Ka, J.W.⁴ Yip, H.L.⁵ Tucker, N.M.⁶ Jen, A.K.Y.⁷

10
- 1242320224
- 0897-4756. 10.1021/cm0304546
- M. D. Groner, F. H. Fabreguette, J. W. Elam, and S. M. George, Chem. Mater. 0897-4756 16, 639 (2004). 10.1021/cm0304546
- (2004) Chem. Mater. , vol.16 , pp. 639
- Groner, M.D.¹ Fabreguette, F.H.² Elam, J.W.³ George, S.M.⁴

11
- 57049164811
- 10.1063/1.3020533
- X. H. Zhang and B. Kippelen, J. Appl. Phys. 104, 104504 (2008). 10.1063/1.3020533
- (2008) J. Appl. Phys. , vol.104 , pp. 104504
- Zhang, X.H.¹ Kippelen, B.²

12
- 21444461564
- Fabrication and characterization of solution-processed methanofullerene- based organic field-effect transistors
- DOI 10.1063/1.1895466, 083714
- T. B. Singh, N. Marjanovic, P. Stadler, M. Auinger, G. J. Matt, S. Gunes, N. S. Sariciftci, R. Schwodiauer, and S. Bauer, J. Appl. Phys. 97, 083714 (2005). 10.1063/1.1895466 (Pubitemid 40914227)
- (2005) Journal of Applied Physics , vol.97 , Issue.8 , pp. 1-5
- Singh, Th.B.¹ Marjanovic, N.² Stadler, P.³ Auinger, M.⁴ Matt, G.J.⁵ Gunes, S.⁶ Sariciftci, N.S.⁷ Schwodiauer, R.⁸ Bauer, S.⁹

13
- 33745819922
- 84 fullerene derivative
- DOI 10.1002/adma.200600068
- T. D. Anthopoulos, F. B. Kooistra, H. J. Wondergem, D. Kronholm, J. C. Hummelen, and D. M. de Leeuw, Adv. Mater. 0935-9648 18, 1679 (2006). 10.1002/adma.200600068 (Pubitemid 44035664)
- (2006) Advanced Materials , vol.18 , Issue.13 , pp. 1679-1684
- Anthopoulos, T.D.¹ Kooistra, F.B.² Wondergem, H.J.³ Kronholm, D.⁴ Hummelen, J.C.⁵ De Leeuw, D.M.⁶

14
- 34948812397
- Solution-processed n-type organic field-effect transistors with high ON/ OFF current ratios based on fullerene derivatives
- DOI 10.1109/LED.2007.905960
- S. P. Tiwari, E. B. Namdas, V. R. Rao, D. Fichou, and S. G. Mhaisalkar, IEEE Electron Device Lett. 0741-3106 28, 880 (2007). 10.1109/LED.2007.905960 (Pubitemid 47526992)
- (2007) IEEE Electron Device Letters , vol.28 , Issue.10 , pp. 880-883
- Tiwari, S.P.¹ Namdas, E.B.² Ramgopal Rao, V.³ Fichou, D.⁴ Mhaisalkar, S.G.⁵

15
- 45949102348
- 0379-6779. 10.1016/j.synthmet.2008.03.016
- P. H. Wobkenberg, D. D. C. Bradley, D. Kronholm, J. C. Hummelen, D. M. de Leeuw, M. Colle, and T. D. Anthopoulos, Synth. Met. 0379-6779 158, 468 (2008). 10.1016/j.synthmet.2008.03.016
- (2008) Synth. Met. , vol.158 , pp. 468
- Wobkenberg, P.H.¹ Bradley, D.D.C.² Kronholm, D.³ Hummelen, J.C.⁴ De Leeuw, D.M.⁵ Colle, M.⁶ Anthopoulos, T.D.⁷

16
- 15244338556
- General observation of n-type field-effect behaviour in organic semiconductors
- DOI 10.1038/nature03376
- L. L. Chua, J. Zaumseil, J. F. Chang, E. C. W. Ou, P. K. H. Ho, H. Sirringhaus, and R. H. Friend, Nature (London) 0028-0836 434, 194 (2005). 10.1038/nature03376 (Pubitemid 40388045)
- (2005) Nature , vol.434 , Issue.7030 , pp. 194-199
- Chua, L.-L.¹ Zaumseil, J.² Chang, J.-F.³ Ou, E.C.-W.⁴ Ho, P.K.-H.⁵ Sirringhaus, H.⁶ Friend, R.H.⁷

17
- 70349318557
- 0021-8979. 10.1063/1.3204655
- S. P. Tiwari, X. -H. Zhang, W. J. Potscavage, Jr., and B. Kippelen, J. Appl. Phys. 0021-8979 106, 054504 (2009). 10.1063/1.3204655
- (2009) J. Appl. Phys. , vol.106 , pp. 054504
- Tiwari, S.P.¹ Zhang, X.-H.² Potscavage Jr., W.J.³ Kippelen, B.⁴

18
- 0038650905
- 0021-8979. 10.1063/1.1568157
- J. Zaumseil, K. W. Baldwin, and J. A. Rogers, J. Appl. Phys. 0021-8979 93, 6117 (2003). 10.1063/1.1568157
- (2003) J. Appl. Phys. , vol.93 , pp. 6117
- Zaumseil, J.¹ Baldwin, K.W.² Rogers, J.A.³

19
- 36249032600
- (CRC, Boca Raton)
- Z. Bao and J. Locklin, Organic Field-Effect Transistors (CRC, Boca Raton, 2007).
- (2007) Organic Field-Effect Transistors
- Bao, Z.¹ Locklin, J.²

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