Spatial atmospheric atomic layer deposition of InxGayZnzO for thin film transistors

ACS Applied Materials and Interfaces

Volumn 7, Issue 6, 2015, Pages 3671-3675

  Illiberi, A ^a   Cobb, B ^a   Sharma, A ^a   Grehl, T ^b   Brongersma, H ^b,c   Roozeboom, F ^a,c   Gelinck, G ^a   Poodt, P ^a  

^a HOLST CENTRE   (Netherlands)

^b UNIVERSITY OF MÜNSTER   (Germany)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

amorphous semiconductors; atmospheric pressure; atomic layer deposition; indium gallium zinc oxide; nucleation; thin film transistors

Indexed keywords

AMORPHOUS SEMICONDUCTORS; ATMOSPHERIC PRESSURE; ATOMIC LAYER DEPOSITION; ATOMS; CRYSTALLIZATION; II-VI SEMICONDUCTORS; MORPHOLOGY; NUCLEATION; OXIDE MINERALS; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

ACTIVE CHANNELS; ELECTRICAL CHARACTERISTIC; INDIUM GALLIUM ZINC OXIDES; METAL COMPOSITION; NUCLEATION AND GROWTH; OXYGEN PRECURSORS; TRIETHYL GALLIUMS; TRIMETHYL INDIUMS;

GALLIUM COMPOUNDS;

EID: 84923250209     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am508071y     Document Type: Article

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