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Journal of Materials Chemistry

Volumn 21, Issue 35, 2011, Pages 13524-13529

Bias stress stable aqueous solution derived Y-doped ZnO thin film transistors

(5) Jun, Taehwan a Song, Keunkyu a Jung, Yangho a Jeong, Sunho b Moon, Jooho a

a Yonsei University (South Korea)

b Korea Research Institute of Chemical Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS PRECURSOR; BIAS STRESS; DEVICE PERFORMANCE; HIGH STABILITY; INTRINSIC ELECTRICAL PROPERTY; METAL HYDROXIDE; NEGATIVE BIAS; ON/OFF CURRENT RATIO; OXIDE SEMICONDUCTOR; POSITIVE BIAS; SOLUTION-PROCESSED; STRESS-INDUCED INSTABILITIES; TEMPERATURE STRESS; THRESHOLD VOLTAGE SHIFTS; Y-DOPED; ZNO;

DISSOLUTION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; THIN FILM DEVICES; THRESHOLD VOLTAGE; TRANSISTORS; YTTRIUM; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 80052069231 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c1jm11586c Document Type: Article

Times cited : (59)

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