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Advanced Materials

Volumn 25, Issue 20, 2013, Pages 2821-2825

Facile encapsulation of oxide based thin film transistors by atomic layer deposition based on ozone

(6) Fakhri, Morteza a Babin, Nikolai a Behrendt, Andreas a Jakob, Timo a Görrn, Patrick a Riedl, Thomas a

a UNIVERSITY OF WUPPERTAL (Germany)

Author keywords

ALD; encapsulation; metal oxide; ozone; thin film transistor

Indexed keywords

ALD; INDIUM GALLIUM ZINC OXIDES (IGZO); LOW TEMPERATURES; METAL OXIDES; METAL-OXIDE; OXYGEN SOURCES; POST-TREATMENT PROCESS; ZINC-TIN-OXIDE (ZTO);

ENCAPSULATION; OZONE; THIN FILM TRANSISTORS; ZINC;

ATOMIC LAYER DEPOSITION;

METAL; OXIDE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE; GAS; MATERIALS TESTING; SEMICONDUCTOR;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GASES; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; METALS; OXIDES; TRANSISTORS, ELECTRONIC;

EID: 84877974388 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201300549 Document Type: Article

Times cited : (28)

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