High-performance C60 n -channel organic field-effect transistors through optimization of interfaces

Journal of Applied Physics

Volumn 104, Issue 10, 2008, Pages

  Zhang, Xiao Hong ^a   Kippelen, Bernard ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; AMORPHOUS SILICON; BUTENES; CALCIUM; DRAIN CURRENT; ELECTRIC PROPERTIES; FIELD EFFECT SEMICONDUCTOR DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); MOSFET DEVICES; OZONE WATER TREATMENT; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON; SMELTING; THIN FILM TRANSISTORS; TRANSISTORS;

ALUMINUM OXIDES; ATOMIC LAYERS; BENZOCYCLOBUTENE; CHANNEL LENGTHS; CHARGE MOBILITIES; CONSTANT VALUES; CONVENTIONAL METALS; ELECTRICAL PERFORMANCES; ELECTRICAL PROPERTIES; GATE DIELECTRIC LAYERS; GLOVEBOX; HIGH MOBILITIES; LOW OPERATING VOLTAGES; OPERATING PROPERTIES; SEMI-CONDUCTORS; SOURCE AND DRAIN ELECTRODES; SOURCE VOLTAGES;

FIELD EFFECT TRANSISTORS;

EID: 57049164811     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3020533     Document Type: Article

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